Description
CSD19505KCS 80 V N-Channel NexFET Power MOSFET. 1 Features. Product Summary. 1 Ultra-Low Qg and Qgd. TA = 25 C. TYPICAL VALUE. UNIT. Oct 18, 2014 Qty. Eco Plan. (2). Lead/Ball Finish. (6). MSL Peak Temp. (3). Op Temp ( C). Device Marking. (4/5). Samples. CSD19505KCS . ACTIVE. TO-220. performance controller and driver for standard and. Systems logic-level N- channel MOSFET power devices used. Up to 600-kHz Operating Frequency for. Apr 22, 2014 l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge topologies. Single. TO-220. 55 to 175. CSD19505KCS . 80. 20. 2.6. 208. 2.6. 76. 11. 25. Single. TO-220. 55 to 175. CSD19506KCS. 80. 20. 2.5. 273. 2. 120. 20. 37. Single.
Part Number | CSD19505KCS |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Cirrus Logic |
Description | MOSFET N-CH 80V 150A TO-220 |
Series | NexFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 150A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 76nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7820pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 100A, 6V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
CSD19505KCS
CirrusLogic()
10000
0.72
Shenzhen Taochip Electronic Co.,Ltd
CSD19505KCS
CIRRUSLOGICINC
25860
1.2175
YU TUO (HONGKONG) TRADING CO., LIMITED
CSD19505KCS
Cirrus Logic Inc.
32669
1.715
LIXINC Electronics Co., Limited
CSD19505KCS
CIURRUS
4500
2.2125
Circle World Electronics Ltd.
CSD19505KCS
Cirrus Logic Inc
935
2.71
Cicotex Electronics (HK) Limited